We investigated the magnetoconductivity Δσ(H,T) defined by a function of magnetic field H and temperature T for three-dimensional indium-gallium-zinc oxide films in the resistivity ρ range of 0.076 × 10^-3 Ω m ≤ ρ(2.0 K) ≤ 0.55 × 10^-3 Ω m. Here, Δσ(H,T) is the Δσ(H,T) ≡ 1 ρ(H,T) - 1 / ρ(0,T). With increasing ρ, the contribution Δσ_EEI due to the electron-electron interaction (EEI) effect overcomes the contribution Δσ_WL due to the weak localization (WL) effect. The sign of Δσ(H) = Δσ_{EEI +} Δ_WL changes from positive to negative with increasing magnetic field, particularly at low temperatures. To perform a systematic investigation of Δσ_EEI, we obtained the contribution of AA_EEI using the relation Δσ_EEI(H,T) = Δσ^exp.(H,T) - Δσ^theo._WL(H,T). where Δσ^theo._WL (H,T) is estimated by fitting the WL theory to data at low magnetic fields. It was found that i) Δσ_EEI(H,T)/√T as a function of H/T for each film collapses onto a single universal curve at a magnetic field of up to 5 T and in the temperature range between 2.0 and 50 K. ii) From the analyses of Δσ_EEI(H,T)/√T in the high and low H/T regions with the EEI theory, the screening factors F_Δσ,H and F_Δσ,L were estimated, respectively. iii) The F_Δσ,H values satisfy the theoretical prediction as 0 < F < 1. iv) With increasing ρ, the magnitudes of both F_Δσ,H and F_Δσ,L essentially decrease to approach 0 at ρ_c ≃ 1.3 × 10^-3 Ω m, where the metal-insulator transition is suggested to occur.

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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:14-0094879
   |texte=   Electron weak localization and electron-electron interaction effects on magneto-conductivity in In-Ga-Zn oxide films
}}